Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold-Reference-Cited by-同舟云学术

Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold

Published:2001-04-27 Issue:19 Volume:63 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Cavalleri A.,Siders C. W.,Rose-Petruck C.,Jimenez R.,Tóth Cs.,Squier J. A.,Barty C. P. J.,Wilson K. R.,Sokolowski-Tinten K.,Horn von Hoegen M.,von der Linde D.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.193306/fulltext

Reference28 articles.

1. Laser-Beam Interactions with Materials

2. Pulsed laser vaporization and deposition

3. Machining of sub-micron holes using a femtosecond laser at 800 nm

4. Detection of Nonthermal Melting by Ultrafast X-ray Diffraction

5. Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation

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