Electronic transport in molecular-beam-epitaxy-grownAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.8564/fulltext
Reference10 articles.
1. Electron transport and band structure ofGa1−xAlxAsalloys
2. Pressure and compositional dependences of the Hall coefficient inAlxGa1−xAsand their significance
3. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering Spectra
4. Electron energy levels in GaAs-Ga1−xAlxAsheterojunctions
5. Surface conductivity measurements by a capacitive coupling technique
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