Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies-Reference-Cited by-同舟云学术

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Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

Published:2018-05-09 Issue:19 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Saladukha D.,Clavel M. B.,Murphy-Armando F.,Greene-Diniz G.,Grüning M.,Hudait M. K.,Ochalski T. J.

Funder

Science Foundation Ireland

National Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.195304/fulltext

Reference70 articles.

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2. Device Requirements for Optical Interconnects to Silicon Chips

3. CMOS Photonics for High-Speed Interconnects

4. An ultra-small, low-power, all-optical flip-flop memory on a silicon chip

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1. Unveiling Novel Direct Bandgap Allotropes of Germanium: A Computational Exploration;Computational Materials Today;2024-09

2. Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance;Journal of Vacuum Science & Technology A;2024-08-01

3. Photoreflectance Analysis of InAsPSb/InGaAs Multi-Quantum Well LED Structures with Different Well/Barrier Numbers;Photonics;2024-03-21

4. Mapping the Ge/InAl(Ga)As interfacial electronic structure and strain relief mechanism in germanium quantum dots;Journal of Materials Chemistry C;2024

5. Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al₂O₃;ACS Applied Electronic Materials;2023-05-24

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