Termination-dependent surface properties in the giant-Rashba semiconductorsBiTeX(X=Cl, Br, I)-Reference-Cited by-同舟云学术

Termination-dependent surface properties in the giant-Rashba semiconductorsBiTeX(X=Cl, Br, I)

Published:2015-12-15 Issue:23 Volume:92 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fiedler Sebastian,Bathon Thomas,Eremeev Sergey V.,Tereshchenko Oleg E.,Kokh Konstantin A.,Chulkov Evgueni V.,Sessi Paolo,Bentmann Hendrik,Bode Matthias,Reinert Friedrich

Funder

Deutsche Forschungsgemeinschaft

Ministry of Education and Science of the Russian Federation

Russian Foundation for Basic Research

Saint Petersburg State University

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.92.235430/fulltext

Reference47 articles.

1. Giant Rashba-type spin splitting in bulk BiTeI

2. Ideal Two-Dimensional Electron Systems with a Giant Rashba-Type Spin Splitting in Real Materials: Surfaces of Bismuth Tellurohalides

3. Detection of Berry’s Phase in a Bulk Rashba Semiconductor

4. Giant Ambipolar Rashba Effect in the Semiconductor BiTeI

5. Disentanglement of Surface and Bulk Rashba Spin Splittings in Noncentrosymmetric BiTeI

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