Transverse magnetotunneling inAlxGa1−xAs capacitors. II. Electron phase changes in resonant Fowler-Nordheim tunneling-Reference-Cited by-同舟云学术

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Transverse magnetotunneling inAlxGa1−xAs capacitors. II. Electron phase changes in resonant Fowler-Nordheim tunneling

Published:1989-12-15 Issue:17 Volume:40 Page:11683-11692
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hickmott T. W.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.11683/fulltext

Reference34 articles.

1. Weak localization in thin films

2. Aharonov-Bohm effect in normal metal quantum coherence and transport

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1. Temperature-dependent Fowler–Nordheim tunneling and a compensation effect in anodized Al-Al2O3-Au diodes;Journal of Applied Physics;2005-05-15

2. Resonant tunneling of electrons through virtual interference states formed as a result of reflection from the boundary of strongly doped region of GaAs;Journal of Experimental and Theoretical Physics;2004-09

3. Tunneling resonances in structures with a two-step barrier;Journal of Experimental and Theoretical Physics Letters;1998-05

4. Landau levels in the presence of a potential barrier;Journal of Physics: Condensed Matter;1994-08-15

5. Incoherent mesoscopic hole tunneling through barrier states inp-typeAlxGa1−xAs capacitors;Physical Review B;1992-12-15

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