Alloy scattering in quantum-well structures of semiconductor ternaries
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.1145/fulltext
Reference6 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Low pressure-MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlattices
3. Alloy scattering in ternary III-V compounds
4. The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structures
5. Quantum Theory of the Residual Electrical Resistivity of Disordered Alloys
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1. Transport properties of near surface InAs two-dimensional heterostructures;Applied Physics Letters;2018-12-24
2. Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells;Journal of Applied Physics;2014-03-28
3. Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs;MRS Proceedings;2013
4. Exploration of the limits to mobility in two-dimensional hole systems in GaAs/AlGaAs quantum wells;Physical Review B;2012-04-03
5. Direct observation of alloy scattering of two-dimensional electrons in AlxGa1−xAs;Applied Physics Letters;2003-10-06
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