Intra- and inter-valence-band electronic Raman scattering in heavily dopedp-GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.1905/fulltext
Reference13 articles.
1. Intraband Raman scattering by free carriers in heavily dopedn−Si
2. Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes
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