Electronic-charge displacement around a stacking boundary in SiC polytypes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.6376/fulltext
Reference14 articles.
1. Magic angle spinning NMR studies of silicon carbide: polytypes, impurities, and highly inefficient spin-lattice relaxation
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3. Exciton Recombination Radiation and Phonon Spectrum of6HSiC
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