Polarization-dependent angle-resolved photoemission study of a surface state on GaSb(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.5300/fulltext
Reference23 articles.
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3. The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theory
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1. Electronic Structure of Semiconductor Surfaces;Electronic Structure;2000
2. Atomic geometry, electronic structure, and vibrational properties of the AlSb(110) and GaSb(110) surfaces;Physical Review B;1999-02-15
3. Surface valence bands of GaSb(110) investigated by UV photoemission;Surface Science;1998-07
4. Overlayer growth and electronic properties of the Bi/GaSb(110) interface;Physical Review B;1995-06-15
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