Growth mechanism for molecular-beam epitaxy of group-IV semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.6559/fulltext
Reference18 articles.
1. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
2. Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study
3. Nucleation and growth of thin films
4. Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: some basic concepts and Monte-Carlo computer simulations
5. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
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