Piezo-optical effects in GaAs with interspersed (211)-InAs lattice planes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.8825/fulltext
Reference18 articles.
1. Fabrication and optical properties of semiconductor quantum wells and superlattices
2. Monolayer resolution by means of x‐ray interference in semiconductor heterostructures
3. InAs quantum dots in a single-crystal GaAs matrix
4. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices
5. Piezoelectric effects in strained‐layer superlattices
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1. Piezoelectric effect on the optical phonon modes of strained cubic semiconductors: Case of CdTe quantum wells;Physical Review B;2003-04-03
2. InSb(211)A,B表面电子结构特性;Acta Physica Sinica;2000
3. Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B;Japanese Journal of Applied Physics;1998-03-30
4. Phonons, Strains, and Pressure in Semiconductors;High Pressure in Semiconductor Physics II;1998
5. InSb(211) studied by photoelectron spectroscopy and scanning tunneling microscopy;Surface Science;1998-01
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