Ohmic contacts on silicon carbide: The first monolayer and its electronic effect-Reference-Cited by-同舟云学术

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Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

Published:2009-12-01 Issue:24 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wang Zhongchang,Tsukimoto Susumu,Saito Mitsuhiro,Ito Kazuhiro,Murakami Masanori,Ikuhara Yuichi

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.245303/fulltext

Reference103 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications

3. Optimum semiconductors for high-power electronics

4. SiC and GaN bipolar power devices

5. Self-interaction-corrected pseudopotentials for silicon carbide

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