Electron transport through antidot superlattices in Si/Si0.7Ge0.3heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.8853/fulltext
Reference12 articles.
1. Magnetotransport through an antidot lattice in GaAs-AlxGa1−xAs heterostructures
2. Electron pinball and commensurate orbits in a periodic array of scatterers
3. Magnetotransport in two-dimensional lateral superlattices
4. Selective probing of ballistic electron orbits in rectangular antidot lattices
5. Quantized periodic orbits in large antidot arrays
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1. High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential;Scientific Reports;2016-02
2. Electron transport through antidot superlattices in Si/SiGe heterostructures: New magnetoresistance resonances in lattices with a large aspect ratio of antidot diameter to lattice period;Europhysics Letters (EPL);2006-11
3. Growth of GaAs/InAs Antidot Structure by Solid-Source MBE;Japanese Journal of Applied Physics;2002-04-30
4. Area selective epitaxy of anti-dot structure of GaAs by solid source MBE;Journal of Crystal Growth;2001-07
5. Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching;Semiconductor Science and Technology;2000-08-01
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