Thomas-Fermi-Dirac statistical theory of dispersive dielectric screening in undoped semiconductors at zero temperature
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.3259/fulltext
Reference34 articles.
1. Thomas-Fermi dielectric screening in semiconductors
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4. Dielectric matrices and local fields in polar semiconductors
5. Shallow-Deep Instabilities of Donor Impurity Levels and Excitons in Many-Valley Semiconductors
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2. Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors;physica status solidi (b);2001-07
3. Thomas - Fermi-type dielectric screening of statistical atomic models of donor-specific impurities in a semiconductor-like valence electron gas at zero temperature;Journal of Physics: Condensed Matter;1996-07-22
4. Nonlocal contributions to the dielectric screening of point donor impurities in semiconductors;Physical Review B;1992-05-15
5. Weizsacker correction in the Thomas-Fermi and Thomas-Fermi-Dirac models of static dielectric screening in undoped semiconductors: Impurity donor ions in silicon and germanium;Physical Review B;1992-04-15
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