Quantum theory of electronic properties in doped semiconductors by an extension of the method of the bent-band theory
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.3090/fulltext
Reference45 articles.
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1. Effect of Impurity Correlation on the Density of States in Slightly Compensated Heavily Doped Semiconductors;Journal of the Physical Society of Japan;1997-01-15
2. Impurity-induced narrow bands of continuous electronic states in doped semiconductors;Physical Review B;1995-11-15
3. Femtosecond carrier dynamics in Ge measured by a luminescence up-conversion technique and near-band-edge infrared excitation;Physical Review B;1995-10-15
4. On the electron mobility in slightly compensated heavily doped GaAs at low temperatures;Physics Letters A;1993-11
5. Theory of band tails in heavily doped semiconductors;Reviews of Modern Physics;1992-07-01
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