Origin ofd0magnetism in II-VI and III-V semiconductors by substitutional doping at anion site-Reference-Cited by-同舟云学术

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Origin ofd0magnetism in II-VI and III-V semiconductors by substitutional doping at anion site

Published:2010-03-30 Issue:12 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Yang Kesong,Wu Rongqin,Shen Lei,Feng Yuan Ping,Dai Ying,Huang Baibiao

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.125211/fulltext

Reference35 articles.

1. Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

2. Intrinsic Ferromagnetism in Insulating Cobalt Doped AnataseTiO2

3. Anisotropic Ferromagnetism in Substituted Zinc Oxide

4. Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor defects

5. ferromagnetism

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