Theoretical study on interband tunneling of holes through GaAs/AlAs/GaAs single-barrier heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.14131/fulltext
Reference30 articles.
1. Impurity-Assisted Inelastic Tunneling: One-Electron Theory
2. Band offsets in Eu-containing lead chalcogenides and lead chalcogenide superlattices from spectroscopic data
3. Tunneling spectroscopy of GaAs/AlxGa1−xAs/GaAs single-barrier heterojunction diodes
4. Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures
5. Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier structures
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