X-ray absorption, glancing-angle reflectivity, and theoretical study of the N K- and GaM2,3-edge spectra in GaN-Reference-Cited by-同舟云学术

X-ray absorption, glancing-angle reflectivity, and theoretical study of the N K- and GaM2,3-edge spectra in GaN

Published:1997-01-15 Issue:4 Volume:55 Page:2612-2622
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lambrecht W. R. L.,Rashkeev S. N.,Segall B.,Lawniczak-Jablonska K.,Suski T.,Gullikson E. M.,Underwood J. H.,Perera R. C. C.,Rife J. C.,Grzegory I.,Porowski S.,Wickenden D. K.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.2612/fulltext

Reference25 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. Gallium Nitride Studied by Electron Spectroscopy

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