Dopant states ina-Si: H. II. Effects of H and F
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.4658/fulltext
Reference57 articles.
1. Dopant states ina-Si: H. I. Tight-binding-model results
2. Quantitative analysis of hydrogen in glow discharge amorphous silicon
3. Proton-magnetic-resonance studies of microstructure in plasma-deposited amorphous-silicon—hydrogen films
4. Proton nmr studies of annealed plasma-deposited amorphous Si:H films
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