Determination of carrier densities in lightly doped silicon crystals from the Hall effect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.24.4666/fulltext
Reference45 articles.
1. Grundlagen der Halbleiterphysik
2. Temperature dependence of hall mobility and μH/μD for Si
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1. Large-scale conductivity-tensor calculations for Hall effects in time-dependent wave-packet diffusion method;Physical Review B;2014-10-31
2. Donor states in tellurium-doped silicon;Applied Physics A Solids and Surfaces;1984-08
3. Calculation of optical- and acoustic-phonon—limited conductivity and Hall mobilities forp-type silicon and germanium;Physical Review B;1983-11-15
4. Acoustic and optical‐phonon‐limited mobilities in p‐type silicon within the deformation‐potential theory;Applied Physics Letters;1983-09
5. Impurity Parameters of Undoped and Zn-Doped p-Type GaP with Two Acceptor Levels Determined by Hall Measurements;Physica Status Solidi (a);1983-05-16
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