Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)-Reference-Cited by-同舟云学术

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Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)

Published:2000-06-15 Issue:24 Volume:61 Page:R16335-R16338
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Schmidt W. G.,Esser N.,Frisch A. M.,Vogt P.,Bernholc J.,Bechstedt F.,Zorn M.,Hannappel Th.,Visbeck S.,Willig F.,Richter W.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.R16335/fulltext

Reference25 articles.

1. Real-time analysis of III–V-semiconductor epitaxial growth

2. Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface Structure

3. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

4. Reflectance Anisotropy of GaAs(100): Theory and Experiment

5. Reflectance Difference Spectroscopy: Experiment and Theory for the Model System Si(001):As and Application to Si(001)

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1. Substrate Doping and Defect Influence on P-Rich InP(001):H Surface Properties;Surfaces;2024-01-12

2. (Photo-)electrochemical reactions on semiconductor surfaces, part B: III-V surfaces–atomic and electronic structure;Encyclopedia of Solid-Liquid Interfaces;2024

3. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors;Advances in Materials Science and Engineering;2023-12-13

4. Experimental and Computational Aspects of Electrochemical Reflection Anisotropy Spectroscopy: A Review;ChemElectroChem;2023-03-22

5. Vibrational Raman spectroscopy on adsorbate-induced low-dimensional surface structures;Surface Science Reports;2020-03

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