Surface-shifted core levels inMo3Si (100) and (110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.12355/fulltext
Reference24 articles.
1. Electronic properties on silicon-transition metal interface compounds
2. First stages of the Mo/Si(III) interface formation: An UPS, LEED and Auger study
3. Summary Abstract: The Si(111)/Mo interface as studied with synchrotron radiation photoemission and Auger electron spectroscopies
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