Double-dangling-bond defects and band bending at the GaAs (110) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.19.2928/fulltext
Reference14 articles.
1. Influence of volume dope on Fermi level position at gallium arsenide surfaces
2. Work function variations of gallium arsenide cleaved single crystals
3. Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors
4. Electronic surface properties of III–V semiconductors: Excitonic effects, band‐bending effects, and interactions with Au and O adsorbate layers
5. Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110)
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