Exciton tunneling inhibited by disorder inGaAs1−xPx:N
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.7069/fulltext
Reference16 articles.
1. Pressure-Temperature Phase Diagrams of Ferroelectric {N(CH3)4}2CoCl4 and {N(CH3)4}2ZnCl4
2. Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAs
3. Local-environment effect on the nitrogen bound state inGaPxAs1−xalloys: Experiments and coherent-potential approximation theory
4. Transfer of excitons bound to nitrogen in GaAs1-xPx:N
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2. Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N;Journal of Applied Physics;2019-04-14
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