Variational solutions of simple quantum systems subject to variable boundary conditions. II. Shallow donor impurities near semiconductor interfaces: Si, Ge-Reference-Cited by-同舟云学术

Variational solutions of simple quantum systems subject to variable boundary conditions. II. Shallow donor impurities near semiconductor interfaces: Si, Ge

Published:1984-04-15 Issue:8 Volume:29 Page:4524-4533
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

MacMillen Donald B.,Landman Uzi

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.4524/fulltext

Reference28 articles.

1. Nodal Hydrogenic Wave Functions of Donors on Semiconductor Surfaces

2. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

3. Carrier concentration in the inversion layer of a MOS field effect transistor

4. Theory of Donor States in Silicon

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