Quasi-two-dimensional photoexcited carriers in GaAs doping superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.26.2124/fulltext
Reference23 articles.
1. Semiconductor superfine structures by computer-controlled molecular beam epitaxy
2. Electronic properties of InAsGaSb superlattices
3. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
4. Calculation of Stacking Fault Energy by Use of Long-Range Interionic Potential. I. Application of Ewald Method
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