Infrared absorption due to two-dimensional-electron-gas collective excitation in GaAs/AlxGa1−xAs multiple-quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.1848/fulltext
Reference17 articles.
1. Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy
2. A metal grating coupled bound‐to‐miniband transition GaAs multiquantum well/superlattice infrared detector
3. 10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera
4. Extended long‐wavelength λ=11–15‐μm GaAs/AlxGa1−xAs quantum‐well infrared photodetectors
5. Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Coherent phonon-plasmon modes inGaAs:AlxGa1−xAsheterostructures;Physical Review B;1996-06-15
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