Influence of surface reconstruction on the As desorption process from a (001) GaAs surface evaluated by improved high-energy electron-reflectivity measurements
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.5897/fulltext
Reference11 articles.
1. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
2. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
3. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES
4. Surface stoichiometry variation associated with GaAs (001) reconstruction transitions
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