Evidence for quantum confinement in porous silicon from photoluminescence measurements
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.12102/fulltext
Reference13 articles.
1. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition
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4. Theoretical aspects of the luminescence of porous silicon
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