Resonant Raman scattering by acceptors in GaAs/AlxGa1−xAs multiple quantum wells: A probe of exciton localization
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.11035/fulltext
Reference23 articles.
1. Picosecond time-resolved study of excitons in GaAs-A1As multi-quantum-well structures
2. Effects of hole burning on pulse propagation in GaAs quantum wells
3. Resonant degenerate four‐wave mixing in GaAs multiquantum well structures
4. Photon echoes from two‐dimensional excitons in GaAs‐AlGaAs quantum wells
5. Resonance Raman scattering in GaAs-AlxGa1−xAs superlattices: Impurity-induced Fröhlich-interaction scattering
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1. Shannon entropy of asymmetric rectangular multiple well with unequal width barrier;Results in Physics;2022-02
2. Shannon entropies of asymmetric multiple quantum well systems with a constant total length;The European Physical Journal Plus;2021-10
3. Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs;Journal of Applied Physics;2018-05-07
4. Resonant Raman Scattering in GaAs/AlGaAs Quantum Wells Modulated by Microwave Irradiation and by Electron–Hole Photogeneration;physica status solidi (a);1997-11
5. Optical observation of impurity localized states at the edges of Landau subbands in doped quantum wells;Physical Review B;1996-07-15
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