Slater-Koster parametrization for Si and the ideal-vacancy calculation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.2903/fulltext
Reference23 articles.
1. Wave Functions for Impurity Levels
2. Localized Defects in Semiconductors
3. Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs
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5. Self-Consistent Green's-Function Calculation of the Ideal Si Vacancy
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