Band dispersion near the Fermi level forVO2thin films grown onTiO2(001) substrates-Reference-Cited by-同舟云学术

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Band dispersion near the Fermi level forVO2thin films grown onTiO2(001) substrates

Published:2009-09-10 Issue:12 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Saeki K.,Wakita T.,Muraoka Y.,Hirai M.,Yokoya T.,Eguchi R.,Shin S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.125406/fulltext

Reference21 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. The two components of the crystallographic transition in VO2

3. VO2: Peierls or Mott-Hubbard? A view from band theory

4. Dimerization of a linear Heisenberg chain in the insulating phases ofV1−xCrxO2

5. Metal-insulator transition in vanadium dioxide

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1. Correlation-driven electronic reconstruction in FeTe1−xSex;Communications Physics;2022-01-26

2. Photoelectron dispersion in metallic and insulating VO2 thin films;Physical Review Research;2021-09-29

3. First-principle calculation of electronic and optical properties of VO2 by GGA-1/2 quasiparticle approximation;Journal of Applied Physics;2020-12-21

4. Fermi surface topology in a metallic phase of VO2 thin films grown on TiO2(001) substrates;Scientific Reports;2018-12

5. Electronic Structure of the VO Film Grown on Ag(100): Resonant Photoelectron Spectroscopy Study;e-Journal of Surface Science and Nanotechnology;2018-06-07

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