Effects of photoluminescence polarization in semiconductor quantum wells subjected to an in-plane magnetic field
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.045322/fulltext
Reference12 articles.
1. Extreme In-Plane Anisotropy of the Heavy-HolegFactor in (001)-CdTe/CdMnTe Quantum Wells
2. Interface profiles and in-plane anisotropy in common anion type-ICd1−xMgxTe/CdTe/Cd1−xMnxTeheterostructures studied by reflectivity
3. Optical polarization anisotropy of quantum wells induced by a cubic anisotropy of the host material
4. The mechanism of heavy and light hole mixing in GaAs/AlAs superlattices
5. Polarized luminescence of excitons under resonance excitation of GaAs/AlAs type II superlattices in a normal magnetic field
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