Small-signal analysis of spontaneous current instabilities in extrinsic semiconductors with trapping: Application to ultrapurep-type germanium-Reference-Cited by-同舟云学术

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Small-signal analysis of spontaneous current instabilities in extrinsic semiconductors with trapping: Application to ultrapurep-type germanium

Published:1992-05-15 Issue:20 Volume:45 Page:11642-11654
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bonilla Luis L.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.11642/fulltext

Reference25 articles.

1. Extension of the Bloch-Nordsieck model

2. Spontaneous oscillations and chaos in p-germanium

3. Nonlinear oscillations and chaos in n-InSb

4. Frequency Locking, Quasiperiodicity, and Chaos in Extrinsic Ge

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1. Multiple steady state current–voltage characteristics in drift–diffusion modelisation of N type and semi-insulating GaAs Gunn structures;Solid-State Electronics;2010-12

2. Electric Field Domains in Bulk Semiconductors II: Trap-Mediated Instabilities;Nonlinear Wave Methods for Charge Transport;2010-09-20

3. Chaotic motion of space charge wave fronts in semiconductors under time-independent voltage bias;Physical Review E;2001-04-25

4. Bifurcation of traveling waves in extrinsic semiconductors;Physica D: Nonlinear Phenomena;2000-09

5. Periodic Generation and Propagation of Traveling Fronts in DC Voltage Biased Semiconductor Superlattices;SIAM Journal on Applied Mathematics;1997-12

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