Electronic states and cyclotron resonance inn-type InMnAs-Reference-Cited by-同舟云学术

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Electronic states and cyclotron resonance inn-type InMnAs

Published:2003-10-23 Issue:16 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sanders G. D.,Sun Y.,Kyrychenko F. V.,Stanton C. J.,Khodaparast G. A.,Zudov M. A.,Kono J.,Matsuda Y. H.,Miura N.,Munekata H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.165205/fulltext

Reference26 articles.

1. Diluted magnetic III-V semiconductors

2. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

3. Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb

4. Electric-field control of ferromagnetism

5. Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors

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1. Electronic properties study of Mn-doped III-V semiconductor quantum dots with cylindrical symmetry;Physica B: Condensed Matter;2024-10

2. Electronic Properties Study of Mn-Doped Iii-V Semiconductor Quantum Dots with Cylindrical Symmetry;2024

3. Band structure, g -factor, and spin relaxation in n -type InAsP alloys;Physical Review B;2023-09-14

4. g -factor engineering with InAsSb alloys toward zero band gap limit;Physical Review B;2023-09-06

5. Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices;Nature Communications;2022-10-10

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