Hopping conduction in uniaxially stressed Si:B near the insulator-metal transition-Reference-Cited by-同舟云学术

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Hopping conduction in uniaxially stressed Si:B near the insulator-metal transition

Published:1999-07-15 Issue:4 Volume:60 Page:2286-2291
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bogdanovich S.,Simonian D.,Kravchenko S. V.,Sarachik M. P.,Bhatt R. N.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.2286/fulltext

Reference23 articles.

1. Conduction in glasses containing transition metal ions

2. Hopping Conductivity in Disordered Systems

3. A percolation treatment of dc hopping conduction

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1. Strain-induced effects in p-type Si whiskers at low temperatures;Materials Science in Semiconductor Processing;2015-12

2. Scaling of the conductivity of insulating Si:B: A temperature-independent hopping prefactor;Europhysics Letters (EPL);2002-07

3. Variable-Range Hopping in Si : B: A Temperature-Independent Prefactor in Three Dimensions;physica status solidi (b);2002-03

4. Coulomb interactions in Anderson insulators;Philosophical Magazine B;2001-09

5. Metal–insulator transition in 2D: resistance in the critical region;Physica E: Low-dimensional Systems and Nanostructures;2001-02

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