Measurement of the hole dispersion in a quantum well by hot-electron-acceptor luminescence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.4048/fulltext
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1. Effective masses of holes at GaAs-AlGaAs heterojunctions
2. Subbands and Landau levels in the two-dimensional hole gas at the GaAs-AlxGa1−xAs interface
3. Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum Wells
4. Hole subbands in strained GaAs-Ga1−xAlxAs quantum wells: Exact solution of the effective-mass equation
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1. Optical momentum alignment and spin orientation of hot electrons in GaAs/AlAs superlattices;Semiconductor Science and Technology;2008-10-29
2. Effect of valence subband dispersion on near-band-gap transitions inGaAs∕AlxGa1−xAsquantum wells containing a two-dimensional electron gas;Physical Review B;2008-04-21
3. Momentum Alignment and Spin Orientation of Photoexcited Electrons in GaAs in the Transition from Two- to Three-Dimensional Structures;Semiconductors;2001-06
4. Magnetophonon resonance in photoluminescence excitation spectra of magnetoexcitons inGaAs/Al0.3Ga0.7Assuperlattice;Physical Review B;2000-07-15
5. Miniband effects on hot-electron photoluminescence polarization in GaAs/AlAs superlattices;Physical Review B;1997-09-15
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