Conductance fluctuations near the localized-to-extended transition in narrow Si metal-oxide-semiconductor field-effect transistors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.8015/fulltext
Reference50 articles.
1. Maximum Metallic Resistance in Thin Wires
2. Experimental Study of Anderson Localization in Thin Wires
3. Experimental study of localization in thin wires
4. Weak localization in thin films
5. Inelastic electron scattering mechanisms in clean aluminum films
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