Chemical trends in ground- and excited-state properties of interstitial3dimpurities in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.8317/fulltext
Reference12 articles.
1. Spin Resonance of Transition Metals in Silicon
2. Point Defects in GaP, GaAs, and InP
3. Transition metals in silicon
4. Dynamical Jahn-Teller Effect in Paramagnetic Resonance Spectra: Orbital Reduction Factors and Partial Quenching of Spin-Orbit Interaction
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