Oxygen stoichiometry and instability in aluminum oxide tunnel barrier layers-Reference-Cited by-同舟云学术

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Oxygen stoichiometry and instability in aluminum oxide tunnel barrier layers

Published:2005-04-14 Issue:16 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tan E.,Mather P. G.,Perrella A. C.,Read J. C.,Buhrman R. A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.161401/fulltext

Reference18 articles.

1. Niobium trilayer Josephson tunnel junctions with ultrahigh critical current densities

2. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

3. Logic Circuits with Carbon Nanotube Transistors

4. Scanning tunneling spectroscopy and ballistic electron emission microscopy studies of aluminum-oxide surfaces

5. Composition and chemical state of the ions of aluminium-oxide films formed by thermal oxidation of aluminium

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