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Spin effects in electron tunneling through a quantum dot coupled to noncollinearly polarized ferromagnetic leads

Published:2005-05-20 Issue:20 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Rudziński W.,Barnaś J.,Świrkowicz R.,Wilczyński M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.205307/fulltext

Reference27 articles.

1. Magnetoelectronics applications

2. GMR applications

3. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

4. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

5. Spin-polarized tunneling and magnetoresistance in ferromagnet/insulator(semiconductor) single and double tunnel junctions subjected to an electric field

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1. Spintronic transport through a double quantum dot-based spin valve with noncollinear magnetizations;Journal of Magnetism and Magnetic Materials;2022-03

2. Non-Stationary Spin-Polarized Tunneling through a Quantum Dot Coupled to Noncollinearly Polarized Ferromagnetic Leads;JETP Letters;2021-05-26

3. Pseudospin resonances reveal synthetic spin-orbit interaction;Physical Review B;2021-05-17

4. Magnetic field-controlled spin-dependent thermoelectric current in a single-molecule magnet transistor;Journal of Physics: Condensed Matter;2021-05-12

5. Multilevel coherences in quantum dots;Physical Review Research;2020-09-18

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