Energy-resolved study of the spin precession in photoemission from activated (110) GaAs-Reference-Cited by-同舟云学术

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Energy-resolved study of the spin precession in photoemission from activated (110) GaAs

Published:1988-08-15 Issue:6 Volume:38 Page:4136-4155
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Riechert H.,Drouhin H.-J.,Hermann C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.4136/fulltext

Reference33 articles.

1. Band structure of indium antimonide

2. Spectrum and polarization of hot-electron photoluminescence in semiconductors

3. Optical spin orientation. application to the study of photoelectron kinetics

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1. Spin rotation, spin filtering, and spin transfer in directional tunneling through barriers in noncentrosymmetric semiconductors;Physical Review B;2009-04-10

2. Structure of spin-split evanescent states in the fundamental gap of zinc-blende-type semiconductors;Journal of Applied Physics;2005-04-15

3. Extraordinary tunnel effect;Quantum Sensing and Nanophotonic Devices;2004-07-06

4. Spin Injection and Transport in Micro- and Nanoscale Devices;Semiconductor Spintronics and Quantum Computation;2002

5. Fundamentals of spin filtering in ferromagnetic metals with application to spin sensors;Handbook of Infra-red Detection Technologies;2002

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