Vibrational modes of carbon acceptors and hydrogen-carbon pairs in semi-insulating InP doped usingCCl4-Reference-Cited by-同舟云学术

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Vibrational modes of carbon acceptors and hydrogen-carbon pairs in semi-insulating InP doped usingCCl4

Published:1998-12-15 Issue:23 Volume:58 Page:15609-15613
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Davidson B. R.,Newman R. C.,Button C. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.15609/fulltext

Reference27 articles.

1. Semi‐insulating InP grown at low temperature by metalorganic chemical vapor deposition

2. Effect of growth temperature on the electrical properties of CCl4‐doped semi‐insulating InP

3. CCl4‐doped semi‐insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

4. Carbon in III-V Compounds: A Theoretical Approach

5. Raman scattering from vibrational modes in metalorganic molecular beam epitaxy grown carbon doped InP: spectroscopic search for the carbon donor

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vibrational Absorption of Substitutional Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27

2. Vibrational Absorption Associated with Hydrogen;Springer Series in Solid-State Sciences;2011-10-27

3. Dicarbon defects in as-grown and annealed carbon-doped InAs;Journal of Applied Physics;2007-10-15

4. Local vibrational mode study of carbon-dopedInAs;Physical Review B;2006-09-21

5. Hydrogen-impurity complexes in III–V semiconductors;Reports on Progress in Physics;2004-11-03

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