Electronic structure and optical properties of silicon nanowires: A study using x-ray excited optical luminescence and x-ray emission spectroscopy-Reference-Cited by-同舟云学术

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Electronic structure and optical properties of silicon nanowires: A study using x-ray excited optical luminescence and x-ray emission spectroscopy

Published:2004-07-20 Issue:4 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sham T. K.,Naftel S. J.,Kim P.-S. G.,Sammynaiken R.,Tang Y. H.,Coulthard I.,Moewes A.,Freeland J. W.,Hu Y.-F.,Lee S. T.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.045313/fulltext

Reference28 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Quantum confinement and light emission in SiO2/Si superlattices

3. Changes in the Electronic Properties of Si Nanocrystals as a Function of Particle Size

4. Tailorable, visible light emission from silicon nanocrystals

5. The structural and luminescence properties of porous silicon

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