Semiconductor-metal transition of the single-domainK/Si(100)−(2×1)interface by Fermi-surface determination
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.9201/fulltext
Reference38 articles.
1. Angle-resolved photoelectron-spectroscopy study of the Si(001)2×1-K surface
2. Angle-scanned photoelectron diffraction
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5. Angle-resolved photoemission study of a single-domain Si(001)2 × 1-K surface with synchrotron radiation: symmetry and dispersion of surface-states
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1. Atomic and electronic structures of the Rb–C(100) chemisorption system;Physica B: Condensed Matter;2006-09
2. First principles calculations on Na and K-adsorbed diamond(100) surface;Chemical Physics;2006-08
3. Early stages of cesium adsorption on the As-richc(2×8)reconstruction of GaAs(001): Adsorption sites and Cs-induced chemical bonds;Physical Review B;2003-11-19
4. Study of the electronic bonding of Cl–Si(100) by synchrotron radiation photoemission spectroscopy and many-body calculations;Surface Science;1999-03
5. Optical Investigation of Submonolayer Phase Transitions of Cs on GaAs(001);physica status solidi (a);1998-12
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