Cobalt acceptor state in silicon: Temperature dependence of the energy level and capture cross section-Reference-Cited by-同舟云学术

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Cobalt acceptor state in silicon: Temperature dependence of the energy level and capture cross section

Published:1974-06 Issue:12 Volume:9 Page:5217-5221
ISSN:0556-2805
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Penchina Claude,Moore John

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.9.5217/fulltext

Reference23 articles.

1. Many-band pseudopotential calculation of photoionization of zinc in silicon

2. Calculations of impurity states in semiconductors: I

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