Electronic structure and optical, mechanical, and transport properties of the pure, electron-doped, and hole-doped Heusler compound CoTiSb-Reference-Cited by-同舟云学术

Electronic structure and optical, mechanical, and transport properties of the pure, electron-doped, and hole-doped Heusler compound CoTiSb

Published:2012-07-16 Issue:4 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ouardi Siham,Fecher Gerhard H.,Felser Claudia,Schwall Michael,Naghavi S. Shahab,Gloskovskii Andrei,Balke Benjamin,Hamrle Jaroslav,Postava Kamil,Pištora Jaromír,Ueda Shigenori,Kobayashi Keisuke

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.045116/fulltext

Reference52 articles.

1. Crossover from semiconductor to magnetic metal in semi-Heusler phases as a function of valence electron concentration

2. Electronic phase diagram of the XTZ (X=Fe, Co, Ni; T=Ti, V, Zr, Nb, Mn; Z=Sn, Sb) semi-Heusler compounds

3. New Class of Materials: Half-Metallic Ferromagnets

4. Tunable multifunctional topological insulators in ternary Heusler compounds

5. Properties on request in semi-Heusler phases

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