Γ-Xinterference effects on quasi-bound-state lifetimes in GaAs/AlAs double-barrier heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.7281/fulltext
Reference19 articles.
1. Tunneling in a finite superlattice
2. Resonant tunneling in semiconductor double barriers
3. Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodes
4. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
5. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
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