Subband energies inn-channel inversion layers on (111) Ge
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.20.2395/fulltext
Reference9 articles.
1. Space-charge layers on Ge surfaces. II. High-frequency conductivity and cyclotron resonance
2. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
3. Density-functional calculation of sub-band structure in accumulation and inversion layers
4. Self-Consistent Equations Including Exchange and Correlation Effects
5. Exchange and correlation in atoms, molecules, and solids by the spin-density-functional formalism
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1. Investigation on exchange and correlation holes in a strongly confined electron gas;Journal of Physics: Condensed Matter;2004-07-02
2. Electrons in MIS Inversion and Accumulation Layers. Exchange and Correlation Effects within a Modified Thomas-Fermi Theory;physica status solidi (b);1988-07-01
3. Electronic Properties of Two-Dimensional Systems;Physica Scripta;1988-01-01
4. Subband structure ofn-type accumulation and inversion layers in GaAs-Ge heterojunctions;Physical Review B;1985-07-15
5. Non-local exchange correlation energy in quasi-two-dimensional electron layers;Superlattices and Microstructures;1985-01
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