Stable interstitial dopant–vacancy complexes in ZnO
Author:
Funder
U.S. Department of Energy
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.195207/fulltext
Reference41 articles.
1. Doping by Large-Size-Mismatched Impurities: The Microscopic Origin of Arsenic- or Antimony-Dopedp-Type Zinc Oxide
2. Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering
3. p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy
4. Violet luminescence in phosphorus-doped ZnO epitaxial films
5. As-doped p-type ZnO produced by an evaporation∕sputtering process
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